X-On Electronics has gained recognition as a prominent supplier of BCX55-16,135 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCX55-16,135 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BCX55-16,135 Nexperia

BCX55-16,135 electronic component of Nexperia
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See Product Specifications
Part No.BCX55-16,135
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 60 V 1 A 180MHz 1.25 W Surface Mount SOT-89
Datasheet: BCX55-16,135 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2794 ea
Line Total: USD 0.28 
Availability - 5995
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
539
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 1
Multiples : 1
1 : USD 0.135
10 : USD 0.1095
30 : USD 0.0987
100 : USD 0.0851
500 : USD 0.079
1000 : USD 0.0753

5995
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2794
10 : USD 0.1859
100 : USD 0.1001
1000 : USD 0.0902
4000 : USD 0.0737
8000 : USD 0.0583
24000 : USD 0.0561
100000 : USD 0.055

31040
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 6945
Multiples : 1
6945 : USD 0.0702

201
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 208
Multiples : 1
208 : USD 0.1232

31040
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 4000
Multiples : 4000
4000 : USD 0.0822
8000 : USD 0.0617

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the BCX55-16,135 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCX55-16,135 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCP55 BCX55 BC55PA 60 V, 1 A NPN medium power transistors Rev. 8 24 October 2011 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview 1 Type number Package PNP complement Nexperia JEITA JEDEC BCP55 SOT223 SC-73 - BCP52 BCX55 SOT89 SC-62 TO-243 BCX52 BC55PA SOT1061 - - BC52PA 1 Valid for all available selection groups. 1.2 Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 1.3 Applications Linear voltage regulators Power management Low-side switches MOSFET drivers Battery-driven devices Amplifiers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit collector-emitter voltage open base - - 60 V V CEO collector current - - 1 A I C peak collector current single pulse t 1ms --2 A I CM p 1 DC current gain V =2V I =150 mA 63 - 250 h FE CE C 1 selection -10 V =2V I =150 mA 63 - 160 h FE CE C 1 selection -16 V =2V I =150 mA 100 - 250 h FE CE C 1 Pulse test: t 300 s = 0.02. pBCP55 BCX55 BC55PA Nexperia 60 V, 1 A NPN medium power transistors 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol SOT223 1base 2, 4 4 2 collector 3emitter 1 4 collector 132 3 sym016 SOT89 1emitter 2 2 collector 3 3base 1 321 sym042 SOT1061 1base 3 3 2emitter 3 collector 1 2 sym021 12 Transparent top view 3. Ordering information Table 4. Ordering information 1 Type number Package Name Description Version BCP55 SC-73 plastic surface-mounted package with increased SOT223 heatsink 4 leads BCX55 SC-62 plastic surface-mounted package exposed die pad for SOT89 good heat transfer 3 leads BC55PA HUSON3 plastic thermal enhanced ultra thin small outline SOT1061 package no leads 3 terminals body 2 2 0.65 mm 1 Valid for all available selection groups. BCP55 BCX55 BC55PA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 8 24 October 2011 2 of 22

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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