X-On Electronics has gained recognition as a prominent supplier of BSH203,215 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSH203,215 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSH203,215 Nexperia

BSH203,215 electronic component of Nexperia
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See Product Specifications
Part No.BSH203,215
Manufacturer: Nexperia
Category: MOSFETs
Description: P-Channel 30 V 470mA (Ta) 417mW (Ta) Surface Mount TO-236AB
Datasheet: BSH203,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3256 ea
Line Total: USD 0.33 
Availability - 196974
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8730
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0845
6000 : USD 0.0845
9000 : USD 0.0845
15000 : USD 0.0845
30000 : USD 0.0845

196974
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3256
10 : USD 0.132
100 : USD 0.1133
1000 : USD 0.099
3000 : USD 0.0869
9000 : USD 0.0792

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
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Taric
Typical Turn-On Delay Time
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We are delighted to provide the BSH203,215 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSH203,215 and other electronic components in the MOSFETs category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of Philips Semiconductors Product specification P-channel enhancement mode BSH203 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA s Very low threshold voltage V = -30 V DS Fast switching Logic level compatible I = -0.47 A D g Subminiature surface mount package R 1.1 (V = -2.5 V) DS(ON) GS V 0.4 V GS(TO) d GENERAL DESCRIPTION PINNING SOT23 P-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power 3 transistor. This device has low 1 gate Top view threshold voltage and extremely fast switching making it ideal for 2 source battery powered applications and high speed digital interfacing. 3 drain 1 2 The BSH203 is supplied in the SOT23 subminiature surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Drain-source voltage - -30 V DS V Drain-gate voltage R = 20 k - -30 V DGR GS V Gate-source voltage - 8V GS I Drain current (DC) T = 25 C - -0.47 A D a T = 100 C - -0.3 A a I Drain current (pulse peak value) T = 25 C - -1.9 A DM a P Total power dissipation T = 25 C - 0.417 W tot a T = 100 C - 0.17 W a T , T Storage & operating temperature - 55 150 C stg j THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R Thermal resistance junction to FR4 board, minimum 300 - K/W th j-a ambient footprint August 1998 1 Rev 1.000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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