MJD2873-QJ Nexperia

MJD2873-Q 50 V, 2 A NPN high power bipolar transistor 17 May 2021 Product data sheet 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to popular MJD2873 series Low collector emitter saturation voltage Fast switching speeds Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications Power management Load switch Linear mode voltage regulator Constant current drive backlighting application Motor drive Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 50 V CEO voltage I collector current - - 2 A C I peak collector current single pulse t 1 ms - - 3 A CM p h DC current gain V = 2 V I = 0.5 A pulsed t 120 - 360 FE CE C p 300 s 0.02 T = 25 C amb V = 2 V I = 2 A pulsed t 300 s 40 - - CE C p 0.02 T = 25 C ambNexperia MJD2873-Q 50 V, 2 A NPN high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 B base 2 C collector E 3 E emitter B mb C mounting base connected C mb to collector 2 aaa-029889 1 3 DPAK (SOT428C) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version MJD2873-Q DPAK Plastic single-ended surface-mounted package (DPAK) 3 SOT428C leads (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code MJD2873A MJD2873-Q 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC601134). Symbol Parameter Conditions Min Max Unit V collector-emitter voltage open base - 50 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 2 A C I peak collector current single pulse t 1 ms - 3 A CM p P total power dissipation T 25 C 1 - 15 W tot mb T 25 C 2 - 1.6 W amb T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg 1 Total power dissipation junction to mounting base. 2 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided 70 m copper, tin-plated mounting pad for collector 1 cm . MJD2873-Q All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 17 May 2021 2 / 10