X-On Electronics has gained recognition as a prominent supplier of MJD45H11AJ Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJD45H11AJ Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJD45H11AJ Nexperia

MJD45H11AJ electronic component of Nexperia
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Part No.MJD45H11AJ
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT TRANS BIPOLAR
Datasheet: MJD45H11AJ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5489 ea
Line Total: USD 0.55 
Availability - 19974
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19974
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5489
10 : USD 0.4708
100 : USD 0.3289
500 : USD 0.2695
1000 : USD 0.2255
2500 : USD 0.2046
5000 : USD 0.1991
25000 : USD 0.1991

   
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We are delighted to provide the MJD45H11AJ from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJD45H11AJ and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJD45H11A 80 V, 8 A PNP high power bipolar transistor 3 February 2021 Product data sheet 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11A 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to popular MJD45H series Low collector emitter saturation voltage Fast switching speeds AEC-Q101 qualified 3. Applications Power management Load switch Linear mode voltage regulator Constant current drive backlighting application Motor drive Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -80 V CEO voltage I collector current - - -8 A C I peak collector current single pulse t 1 ms - - -16 A CM p h DC current gain V = -1 V I = -2 A T = 25 C 60 - - FE CE C ambNexperia MJD45H11A 80 V, 8 A PNP high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 B base E 2 C collector B 3 E emitter C mb mb C mounting base connected aaa-029523 to collector 2 1 3 DPAK (SOT428C) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version MJD45H11A DPAK Plastic single-ended surface-mounted package (DPAK) 3 leads SOT428C (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code MJD45H11A MJD45H11A 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-emitter voltage open base - -80 V CEO V emitter-base voltage open collector - -6 V EBO I collector current - -8 A C I peak collector current single pulse t 1 ms - -16 A CM p P total power dissipation T 25 C 1 - 20 W tot mb T 25 C 2 - 1.75 W amb T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg 1 Total power dissipation junction to mounting base. 2 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for collector 1 cm . MJD45H11A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 3 February 2021 2 / 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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