X-On Electronics has gained recognition as a prominent supplier of NXP3875GR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NXP3875GR Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NXP3875GR Nexperia

NXP3875GR electronic component of Nexperia
NXP3875GR Nexperia
NXP3875GR Bipolar Transistors - BJT
NXP3875GR  Semiconductors

Images are for reference only
See Product Specifications
Part No. NXP3875GR
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 50V 150 mA NPN gnrl purpose transistors
Datasheet: NXP3875GR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0542 ea
Line Total: USD 162.6 
Availability - 11640
Ship by Wed. 12 Mar to Tue. 18 Mar
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
11640
Ship by Wed. 12 Mar to Tue. 18 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.0542
6000 : USD 0.0508
9000 : USD 0.0434
15000 : USD 0.0414
21000 : USD 0.04
24000 : USD 0.036
30000 : USD 0.0321
75000 : USD 0.0304
99000 : USD 0.0289
150000 : USD 0.0275
300000 : USD 0.0262

13103
Ship by Mon. 10 Mar to Wed. 12 Mar
MOQ : 1
Multiples : 1
1 : USD 0.2538
10 : USD 0.1537
100 : USD 0.0924
500 : USD 0.0656
1000 : USD 0.0473
3000 : USD 0.0451
6000 : USD 0.0407
9000 : USD 0.0352
24000 : USD 0.0286

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the NXP3875GR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NXP3875GR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of NXP3875Y NXP3875G 50 V, 150 mA NPN general-purpose transistors Rev. 1 12 December 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits General-purpose transistors Two different current gain selections Small SMD plastic packages AEC-Q101 qualified 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 50 V CEO I collector current - - 150 mA C h DC current gain V =6V I =2mA FE CE C NXP3875Y 120 - 240 NXP3875G 200 - 400 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 3 3 2emitter 3 collector 1 12 2 sym021 SOT23

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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