X-On Electronics has gained recognition as a prominent supplier of PBHV8515QAZ Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBHV8515QAZ Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBHV8515QAZ Nexperia

PBHV8515QAZ electronic component of Nexperia
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Part No.PBHV8515QAZ
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PBHV8515QA/DFN1010D-3/REEL 7
Datasheet: PBHV8515QAZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4554 ea
Line Total: USD 0.46 
Availability - 6601
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6601
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4554
10 : USD 0.3102
100 : USD 0.2156
500 : USD 0.1738
1000 : USD 0.1485
5000 : USD 0.1386
10000 : USD 0.1276
25000 : USD 0.1243

   
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We are delighted to provide the PBHV8515QAZ from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBHV8515QAZ and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBHV8515QA 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor 19 November 2015 Product data sheet 1. General description NPN high-voltage low V Breakthrough In Small Signal (BISS) transistor in a leadless CEsat ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBHV9515QA. 2. Features and benefits High voltage Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C Low package height of 0.37 mm AEC-Q101 qualified Suitable for Automatic Optical Inspection (AOI) of solder joint 3. Applications LED driver for LED chain module High Intensity Discharge (HID) front lighting Automotive motor management Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 150 V CEO voltage I collector current - - 500 mA C h DC current gain V = 10 V I = 100 mA pulsed 100 215 - FE CE C t 300 s 0.02 T = 25 C p ambNexperia PBHV8515QA 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 1 2 E emitter B 3 C collector 4 3 E 4 C collector sym123 2 Transparent top view DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBHV8515QA DFN1010D-3 DFN1010D-3: plastic thermal enhanced ultra thin small SOT1215 outline package no leads 3 terminals body 1.1 x 1.0 x 0.37 mm 7. Marking Table 4. Marking codes Type number Marking code PBHV8515QA 00 00 11 READING DIRECTION MARKING CODE (EXAMPLE) YEAR DATE CODE VENDOR CODE PIN 1 MARK-FREE AREA INDICATION MARK READING EXAMPLE: 11 01 10 aaa-008041 Fig. 1. DFN1010D-3 (SOT1215) binary marking code description PBHV8515QA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 November 2015 2 / 17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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