X-On Electronics has gained recognition as a prominent supplier of PBHV8540T,215 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBHV8540T,215 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBHV8540T,215 Nexperia

PBHV8540T,215 electronic component of Nexperia
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Part No.PBHV8540T,215
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 400 V 500 mA 30MHz 300 mW Surface Mount TO-236AB
Datasheet: PBHV8540T,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3993 ea
Line Total: USD 0.4 
Availability - 5947
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0928
6000 : USD 0.089
9000 : USD 0.0861

4424
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2591
50 : USD 0.209
150 : USD 0.1875
500 : USD 0.1606
3000 : USD 0.1486
6000 : USD 0.1416

5947
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3993
10 : USD 0.2695
100 : USD 0.1485
1000 : USD 0.1364
3000 : USD 0.1122
9000 : USD 0.1056
24000 : USD 0.1034

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1349
6000 : USD 0.1271

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1368

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBHV8540T,215 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBHV8540T,215 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBHV8540T 500 V, 0.5 A NPN high-voltage low V (BISS) transistor CEsat Rev. 02 14 January 2009 Product data sheet 1. Product prole 1.1 General description NPN high-voltage low V Breakthrough In Small Signal (BISS) transistor in a CEsat SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040T. 1.2 Features n High voltage n Low collector-emitter saturation voltage V CEsat n High collector current capability I and I C CM n High collector current gain (h ) at high I FE C n AEC-Q101 qualied 1.3 Applications n Electronic ballast for uorescent lighting n LED driver for LED chain module n LCD backlighting n High Intensity Discharge (HID) front lighting n Automotive motor management n Hook switch for wired telecom n Switch mode power supply 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter peak V = 0 V - - 500 V CESM BE voltage V collector-emitter voltage open base - - 400 V CEO I collector current - - 0.5 A C h DC current gain V =10V 100 200 - FE CE I =50mA C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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