X-On Electronics has gained recognition as a prominent supplier of PBHV9040Z,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBHV9040Z,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBHV9040Z,115 Nexperia

PBHV9040Z,115 electronic component of Nexperia
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Part No.PBHV9040Z,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 400 V 250 mA 55MHz 1.4 W Surface Mount SOT-223
Datasheet: PBHV9040Z,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2092 ea
Line Total: USD 1.05 
Availability - 1437
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
3595
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 607
Multiples : 1
607 : USD 0.2141
1000 : USD 0.2106
3000 : USD 0.2071

4850
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 0.1413

1437
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 5
Multiples : 5
5 : USD 0.2092
50 : USD 0.1667
150 : USD 0.1485
1000 : USD 0.1258
2000 : USD 0.1155
5000 : USD 0.1095

428
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5951
10 : USD 0.407
100 : USD 0.2849
500 : USD 0.2233
1000 : USD 0.2013
2000 : USD 0.1749
10000 : USD 0.1727
25000 : USD 0.1705

896
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.742
10 : USD 0.5054
50 : USD 0.3878
54 : USD 0.322
147 : USD 0.3052

2910
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 0.2204

4850
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 0.1368

3595
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 607
Multiples : 1
607 : USD 0.2073

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
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We are delighted to provide the PBHV9040Z,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBHV9040Z,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBHV9040Z 500 V, 0.25 A PNP high-voltage low V (BISS) transistor CEsat Rev. 02 15 January 2009 Product data sheet 1. Product prole 1.1 General description PNP high-voltage low V Breakthrough In Small Signal (BISS) transistor in a CEsat SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540Z. 1.2 Features n High voltage n Low collector-emitter saturation voltage V CEsat n High collector current capability I and I C CM n High collector current gain (h ) at high I FE C n AEC-Q101 qualied 1.3 Applications n Electronic ballast for uorescent lighting n LED driver for LED chain module n LCD backlighting n High Intensity Discharge (HID) front lighting n Automotive motor management n Hook switch for wired telecom n Switch mode power supply 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter peak V =0V - - - 500 V CESM BE voltage V collector-emitter voltage open base - - - 400 V CEO I collector current - - - 0.25 A C h DC current gain V = - 10 V 100 200 - FE CE I = - 50 mA C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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