PBHV9540XF Nexperia

PBHV9540X 400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 28 September 2017 Product data sheet 1. General description PNP high-voltage low V Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) CEsat medium power and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540X 2. Features and benefits High voltage Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C AEC-Q101 qualified 3. Applications Electronic ballast for fluorescent lighting LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front lighting Automotive motor management Hook switch for wired telecom Switch mode power supply 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -400 V CEO voltage I collector current - - -0.5 A C I peak collector current single pulse t 1 ms - - -1 A CM p h DC current gain V = -5 V I = -20 mA T = 25 C 140 - 450 FE CE C amb R collector-emitter I = -200 mA I = -40 mA 1 - - 2000 m CEsat C B saturation resistance T = 25 C amb 1 Pulse test: t 300 s 0.02 pNexperia PBHV9540X 400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E emitter C 2 C collector B 3 B base E 3 2 1 sym132 SOT89 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBHV9540X SOT89 plastic surface-mounted package die pad for good heat transfer SOT89 3 leads 7. Marking Table 4. Marking codes Type number Marking code 1 PBHV9540X %4H 1 % = placeholder for manufacturing site code PBHV9540X All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 28 September 2017 2 / 13