X-On Electronics has gained recognition as a prominent supplier of PBSS302ND,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS302ND,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS302ND,115 Nexperia

PBSS302ND,115 electronic component of Nexperia
PBSS302ND,115 Nexperia
PBSS302ND,115 Bipolar Transistors - BJT
PBSS302ND,115  Semiconductors

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See Product Specifications
Part No. PBSS302ND,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 40 V 4 A 150MHz 1.1 W Surface Mount 6-TSOP
Datasheet: PBSS302ND,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7925 ea
Line Total: USD 0.79 
Availability - 2445
Ship by Mon. 05 May to Wed. 07 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2445
Ship by Mon. 05 May to Wed. 07 May
MOQ : 1
Multiples : 1
1 : USD 0.7925
10 : USD 0.5312
100 : USD 0.3289
500 : USD 0.2486
1000 : USD 0.2211
3000 : USD 0.1969
6000 : USD 0.1859
9000 : USD 0.1782

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS302ND,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS302ND,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS302ND 40 V, 4 A NPN low V (BISS) transistor CEsat Rev. 02 18 February 2008 Product data sheet 1. Product prole 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) CEsat small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PD. 1.2 Features n Ultra low collector-emitter saturation voltage V CEsat n 4 A continuous collector current capability I C n Up to 15 A peak current n Very low collector-emitter saturation resistance n High efciency due to less heat generation 1.3 Applications n Power management functions n Charging circuits n DC-to-DC conversion n MOSFET gate driving n Power switches (e.g. motors, fans) n Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 40 V CEO 1 I collector current --4 A C I peak collector current single pulse --15 A CM t 1ms p 2 R collector-emitter I =6A - 5575m CEsat C saturation resistance I = 600 mA B 1 Device mounted on a ceramic Printed-Circuit Board (PCB), Al O , standard footprint. 2 3 2 Pulse test: t 300 s 0.02. p

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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