Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS302PD 40 V, 4 A PNP low V (BISS) transistor CEsat Rev. 02 6 December 2007 Product data sheet 1. Product prole 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) CEsat small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302ND. 1.2 Features n Ultra low collector-emitter saturation voltage V CEsat n 4 A continuous collector current capability I C n Up to 15 A peak current n Very low collector-emitter saturation resistance n High efciency due to less heat generation 1.3 Applications n Power management functions n Charging circuits n DC-to-DC conversion n MOSFET gate driving n Power switches (e.g. motors, fans) n Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - - 40 V CEO 1 I collector current -- -4A C I peak collector current single pulse -- - 15 A CM t 1ms p 2 R collector-emitter I = - 6A - 5575m CEsat C saturation resistance I = - 600 mA B 1 Device mounted on a ceramic Printed-Circuit Board (PCB), Al O , standard footprint. 2 3 2 Pulse test: t 300 s 0.02. p