Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS303ND 60 V, 3 A NPN low V (BISS) transistor CEsat Rev. 02 14 December 2007 Product data sheet 1. Product prole 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) CEsat small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PD. 1.2 Features n Low collector-emitter saturation voltage V CEsat n High collector current capability I and I C CM n High collector current gain (h ) at high I FE C n High efciency due to less heat generation n Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications n High-voltage DC-to-DC conversion n High-voltage MOSFET gate driving n High-voltage motor control n High-voltage power switches (e.g. motors, fans) n Thin Film Transistor (TFT) backlight inverter n Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 60 V CEO 1 I collector current --3 A C I peak collector current single pulse --6 A CM t 1ms p 2 R collector-emitter I =2A - 6890m CEsat C saturation resistance I = 200 mA B 1 Device mounted on a ceramic PCB, Al O standard footprint. 2 3 2 Pulse test: t 300 s 0.02. p