PBSS305PZ,135 Nexperia

PBSS305PZ 80 V, 4.5 A PNP low V (BISS) transistor CEsat Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) CEsat small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS305NZ. 1.2 Features Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 80 V CEO I collector current - - 4.5 A C I peak collector current single pulse -- 9A CM t 1ms p 1 R collector-emitter saturation I = 4A - 6187m CEsat C resistance I = 200 mA B 1 Pulse test: t 300 s 0.02. pNXP Semiconductors PBSS305PZ 80 V, 4.5 A PNP low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1base 4 2, 4 2 collector 3emitter 1 4 collector 132 3 sym028 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS305PZ SC-73 plastic surface-mounted package with increased heatsink SOT223 4 leads 4. Marking Table 4. Marking codes Type number Marking code PBSS305PZ S305PZ PBSS305PZ 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 8 December 2009 2 of 14