PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor Rev. 3 26 July 2011 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) CEsat small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ. 1.2 Features and benefits Low collector-emitter saturation High efficiency due to less heat voltage V generation CEsat High collector current capability Smaller Printed-Circuit Board (PCB) I and I area than for conventional transistors C CM High collector current gain (h ) at AEC-Q101 qualified FE high I C 1.3 Applications High-voltage DC-to-DC conversion High-voltage power switches (e.g. motors, fans) High-voltage MOSFET gate driving Automotive applications High-voltage motor control 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -100 V CEO voltage I collector current - - -4.1 A C I peak collector current single pulse t 1ms ---8.2 A CM p R collector-emitter I =-4A I = -400 mA pulsed - 5680m CEsat C B saturation resistance t 300 s 0.02 T =25C p ambPBSS306PZ Nexperia 100 V, 4.1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 2, 4 4 2 C collector 3E emitter 1 4 C collector 132 3 sym028 SOT223 (SC-73) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS306PZ SC-73 plastic surface-mounted package with increased heatsink SOT223 4 leads 4. Marking Table 4. Marking codes Type number Marking code PBSS306PZ S306PZ 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - -100 V CBO V collector-emitter voltage open base - -100 V CEO V emitter-base voltage open collector - -5 V EBO I collector current - -4.1 A C I peak collector current single pulse t 1ms - -8.2 A CM p 1 P total power dissipation T 25 C -0.7 W tot amb 2 -1.7 W 3 -2 W T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . 3 Device mounted on a ceramic PCB, Al O , standard footprint. 2 3 PBSS306PZ All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 26 July 2011 2 of 15