X-On Electronics has gained recognition as a prominent supplier of PBSS3540MB,315 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS3540MB,315 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS3540MB,315 Nexperia

PBSS3540MB,315 electronic component of Nexperia
PBSS3540MB,315 Nexperia
PBSS3540MB,315 Bipolar Transistors - BJT
PBSS3540MB,315  Semiconductors

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See Product Specifications
Part No. PBSS3540MB,315
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT 40 V, 0.5 A PNP low VCEsat transistor
Datasheet: PBSS3540MB,315 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1947 ea
Line Total: USD 0.19 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 10000
Multiples : 10000
10000 : USD 0.0763
20000 : USD 0.0761
30000 : USD 0.0759
40000 : USD 0.0756
50000 : USD 0.0755
100000 : USD 0.0753
150000 : USD 0.0752
250000 : USD 0.0749
500000 : USD 0.0746

0
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 1
Multiples : 1
1 : USD 0.3871
10 : USD 0.3029
100 : USD 0.161
500 : USD 0.106
1000 : USD 0.072
2000 : USD 0.065
5000 : USD 0.0565

0
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 1
Multiples : 1
1 : USD 0.3871
10 : USD 0.3029
100 : USD 0.161
500 : USD 0.106
1000 : USD 0.072
2000 : USD 0.065
5000 : USD 0.0565

0
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 10000
Multiples : 10000
10000 : USD 0.05
30000 : USD 0.0452
50000 : USD 0.0424
100000 : USD 0.0376
250000 : USD 0.0367

0
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 10000
Multiples : 10000
10000 : USD 0.0378

0
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 1
1 : USD 0.1947
10 : USD 0.1287
100 : USD 0.0561
1000 : USD 0.0473
2500 : USD 0.0418
10000 : USD 0.0374
20000 : USD 0.0341
50000 : USD 0.033

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS3540MB,315 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS3540MB,315 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS3540MB 40 V, 0.5 A PNP low VCEsat (BISS) transistor Rev. 1 7 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a leadless ultra small CEsat SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2540MB. 1.2 Features and benefits Leadless ultra small SMD plastic High efficiency due to less heat package generation Low package height of 0.37 mm AEC-Q101 qualified Low collector-emitter saturation Reduced Printed-Circuit Board (PCB) voltage V requirements CEsat High collector current capability I and C I CM 1.3 Applications DC-to-DC conversion LCD backlighting Supply line switching Driver in low supply voltage applications (e.g. lamps and LEDs) Battery charger 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -40 V CEO voltage I collector current - - -500 mA C I peak collector current single pulse t 1ms ---1 A CM p R collector-emitter I =-500mA I = -50 mA pulsed - 440 700 m CEsat C B saturation resistance t 300 s 0.02 T =25C p ambPBSS3540MB Nexperia 40 V, 0.5 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 3 1 2E emitter 3 3 C collector 2 1 Transparent 2 top view sym013 SOT883B 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS3540MB - Leadless ultra small plastic package 3 solder lands SOT883B body 1.0 x 0.6 x 0.37 mm 4. Marking Table 4. Marking codes 1 Type number Marking code PBSS3540MB 0001 0100 1 For SOT883B binary marking code description see Figure 1. 4.1 Binary marking code description PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig 1. SOT883B binary marking code decription PBSS3540MB All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 7 March 2012 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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