X-On Electronics has gained recognition as a prominent supplier of PBSS4021NT,215 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4021NT,215 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4021NT,215 Nexperia

PBSS4021NT,215 electronic component of Nexperia
PBSS4021NT,215 Nexperia
PBSS4021NT,215 Bipolar Transistors - BJT
PBSS4021NT,215  Semiconductors

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See Product Specifications
Part No. PBSS4021NT,215
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT BISS Transistor
Datasheet: PBSS4021NT,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1101 ea
Line Total: USD 330.3 
Availability - 2910
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5254
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 739
Multiples : 1
739 : USD 0.176
1000 : USD 0.1745
3000 : USD 0.1663

2910
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.1101
9000 : USD 0.0926
24000 : USD 0.0881
45000 : USD 0.0861

9287
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 0.6437
10 : USD 0.445
100 : USD 0.2887
500 : USD 0.2156
1000 : USD 0.187
3000 : USD 0.1672
6000 : USD 0.1562
9000 : USD 0.1485

2910
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.1101
9000 : USD 0.0926
24000 : USD 0.0881
45000 : USD 0.0861

5254
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 739
Multiples : 1
739 : USD 0.176

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Package Case
Brand
Continuous Collector Current
Dc Collectorbase Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS4021NT,215 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4021NT,215 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS4021NT 20 V, 4.3 A NPN low V (BISS) transistor CEsat Rev. 01 31 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) CEsat small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PT. 1.2 Features Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 20 V CEO I collector current - - 4.3 A C I peak collector current single pulse -- 8 A CM t 1ms p 1 R collector-emitter I =4A -36 50 m CEsat C saturation resistance I =400 mA B 1 Pulse test: t 300 s 0.02. p

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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