X-On Electronics has gained recognition as a prominent supplier of PBSS4021PX,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4021PX,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4021PX,115 Nexperia

PBSS4021PX,115 electronic component of Nexperia
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Part No.PBSS4021PX,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT Single PNP -20V -6.2A 600mW 105MHz
Datasheet: PBSS4021PX,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7889 ea
Line Total: USD 0.79 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 1.3001
10 : USD 1.0951
100 : USD 0.8392
500 : USD 0.6634

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 1.3001
10 : USD 1.0951
100 : USD 0.8392
500 : USD 0.6634

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 0.5503
2000 : USD 0.4809
5000 : USD 0.4694

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 0.7889
10 : USD 0.7185
100 : USD 0.4845
500 : USD 0.3902
1000 : USD 0.3204
5000 : USD 0.2989

0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 1.5793
10 : USD 0.7611
100 : USD 0.4241
250 : USD 0.3941
500 : USD 0.3349

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 44
Multiples : 1
44 : USD 0.7424

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS4021PX,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4021PX,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS4021PX 20 V, 6.2 A PNP low V (BISS) transistor CEsat Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a medium power and CEsat flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4021NX. 1.2 Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 20 V CEO I collector current - - 6.2 A C I peak collector current single pulse -- 15 A CM t 1ms p 1 R collector-emitter I = 4A -23 38 m CEsat C saturation resistance I = 400 mA B 1 Pulse test: t 300 s 0.02. pPBSS4021PX Nexperia 20 V, 6.2 A PNP low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1emitter 2 2 collector 3base 3 1 321 006aaa231 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4021PX SC-62 plastic surface-mounted package 3 leads SOT89 4. Marking Table 4. Marking codes 1 Type number Marking code PBSS4021PX *6E 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 20 V CBO V collector-emitter voltage open base - 20 V CEO V emitter-base voltage open collector - 5V EBO I collector current - 6.2 A C I peak collector current single pulse - 15 A CM t 1ms p I base current - 1A B PBSS4021PX 1 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 1 April 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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