X-On Electronics has gained recognition as a prominent supplier of PBSS4021SPN,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4021SPN,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4021SPN,115 Nexperia

PBSS4021SPN,115 electronic component of Nexperia
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See Product Specifications
Part No.PBSS4021SPN,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT Dual -20V 7.5A -6.3A 0.86W 115MHz
Datasheet: PBSS4021SPN,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1000
Multiples : 1000
1000 : USD 1.1126
2000 : USD 1.103
3000 : USD 1.0932
4000 : USD 1.0836
5000 : USD 1.0738
6000 : USD 1.0641
10000 : USD 1.0543
20000 : USD 1.0446
50000 : USD 1.0347
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.4347
10 : USD 1.0164
100 : USD 0.8001
250 : USD 0.7882
500 : USD 0.6687
1000 : USD 0.5861
5000 : USD 0.5064
10000 : USD 0.5053
N/A

Obsolete
0
MOQ : 22
Multiples : 1
22 : USD 1.6334
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PBSS4021SPN,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4021SPN,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS4021SPN 20 V NPN/PNP low V (BISS) transistor CEsat Rev. 2 13 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) CEsat medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement Nexperia Name PBSS4021SPN SOT96-1 SO8 PBSS4021SN PBSS4021SP 1.2 Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Loadswitch Charging circuits Battery-driven devices Power switches (e.g. motors, fans) Power management 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit transistor TR1 NPN low V CEsat collector-emitter voltage open base - - 20 V V CEO collector current - - 7.5 A I C peak collector current single pulse t 1ms --15 A I CM p 1 collector-emitter I =5A I =0.5 A - 2535m R CEsat C B saturation resistancePBSS4021SPN Nexperia 20 V NPN/PNP low V (BISS) transistor CEsat Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit TR2 PNP low V transistor CEsat V collector-emitter voltage open base - - 20 V CEO I collector current - - 6.3 A C I peak collector current single pulse t 1ms - - 15 A CM p 1 R collector-emitter I = 5A I = 0.5 A - 3654m CEsat C B saturation resistance 1 Pulse test: t 300 s 0.02. p 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1emitter TR1 8 5 8765 2 base TR1 3emitter TR2 TR1 TR2 4 base TR2 5 collector TR2 1 4 1234 006aaa985 6 collector TR2 7 collector TR1 8 collector TR1 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PBSS4021SPN SO8 plastic small outline package 8 leads body width 3.9 mm SOT96-1 4. Marking Table 5. Marking codes Type number Marking code PBSS4021SPN 4021SPN PBSS4021SPN All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 13 October 2010 2 of 20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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