X-On Electronics has gained recognition as a prominent supplier of PBSS4112PANP,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4112PANP,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4112PANP,115 Nexperia

PBSS4112PANP,115 electronic component of Nexperia
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Part No.PBSS4112PANP,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT 120V 1A NPNNPN lo VCEsat transistor
Datasheet: PBSS4112PANP,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.539 ea
Line Total: USD 0.54 
Availability - 21654
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
106
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5232
10 : USD 0.4181
30 : USD 0.3715
100 : USD 0.3171
500 : USD 0.2918
1000 : USD 0.2762

21654
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.539
10 : USD 0.3707
100 : USD 0.2585
500 : USD 0.209
1000 : USD 0.1936
3000 : USD 0.1727
6000 : USD 0.1639
9000 : USD 0.1573

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS4112PANP,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4112PANP,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS4112PANP 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor 29 November 2012 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V Breakthrough In Small Signal (BISS) transistor in a leadless CEsat medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4112PAN. PNP/PNP complement: PBSS5112PAP. 1.2 Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified 1.3 Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor for the PNP transistor with negative polarity V collector-emitter open base - - 120 V CEO voltage I collector current - - 1 A C I peak collector current single pulse t 1 ms - - 1.5 A CM p TR1 (NPN) R collector-emitter I = 500 mA I = 50 mA pulsed - - 240 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p ambNexperia PBSS4112PANP 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor Symbol Parameter Conditions Min Typ Max Unit TR2 (PNP) R collector-emitter I = -500 mA I = -50 mA pulsed - - 440 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E1 emitter TR1 6 5 4 C1 B2 E2 2 B1 base TR1 TR2 7 8 3 C2 collector TR2 TR1 4 E2 emitter TR2 E1 B1 C2 1 2 3 5 B2 base TR2 Transparent top view sym139 6 C1 collector TR1 DFN2020-6 (SOT1118) 7 C1 collector TR1 8 C2 collector TR2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4112PANP DFN2020-6 plastic thermal enhanced ultra thin small outline package no SOT1118 leads 6 terminals body 2 x 2 x 0.65 mm 4. Marking Table 4. Marking codes Type number Marking code PBSS4112PANP 2T 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor for the PNP transistor with negative polarity V collector-base voltage open emitter - 120 V CBO V collector-emitter voltage open base - 120 V CEO PBSS4112PANP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 29 November 2012 2 / 21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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