X-On Electronics has gained recognition as a prominent supplier of PBSS4160PANPSX Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4160PANPSX Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4160PANPSX Nexperia

PBSS4160PANPSX electronic component of Nexperia
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Part No.PBSS4160PANPSX
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT 60V 1A NPNPNP
Datasheet: PBSS4160PANPSX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6325 ea
Line Total: USD 0.63 
Availability - 2554
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8730
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.202
6000 : USD 0.188
9000 : USD 0.1803
15000 : USD 0.1782
21000 : USD 0.1738
24000 : USD 0.1704
30000 : USD 0.1698

2554
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6325
10 : USD 0.4092
100 : USD 0.275
500 : USD 0.2343
1000 : USD 0.2145
3000 : USD 0.1573
6000 : USD 0.1573
9000 : USD 0.1529
24000 : USD 0.1507

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS4160PANPSX from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4160PANPSX and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS4160PANPS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 February 2015 Product data sheet 1. General description NPN/PNP low V Breakthrough In Small Signal (BISS) transistor in a leadless CEsat medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4160PANS. PNP/PNP complement: PBSS5160PAPS. 2. Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High energy efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints AEC-Q101 qualified 3. Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor for the PNP transistor with negative polarity V collector-emitter open base - - 60 V CEO voltage I collector current - - 1 A C I peak collector current single pulse t 1 ms - - 1.5 A CM pNexperia PBSS4160PANPS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Symbol Parameter Conditions Min Typ Max Unit TR1 (NPN) R collector-emitter I = 0.5 A I = 50 mA pulsed - - 240 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb TR2 (PNP) R collector-emitter I = -0.5 A I = -50 mA pulsed - - 360 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol C1 B2 1 E1 emitter TR1 6 5 4 E2 2 B1 base TR1 TR2 7 8 3 C2 collector TR2 TR1 4 E2 emitter TR2 E1 B1 C2 1 2 3 5 B2 base TR2 sym139 Transparent top view 6 C1 collector TR1 DFN2020D-6 (SOT1118D) 7 C1 collector TR1 8 C2 collector TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4160PANPS DFN2020D-6 DFN2020D-6: plastic, thermally enhanced ultra thin and small SOT1118D outline package no leads 6 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PBSS4160PANPS 3G PBSS4160PANPS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 11 February 2015 2 / 23

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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