X-On Electronics has gained recognition as a prominent supplier of PBSS4160PANSX Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4160PANSX Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4160PANSX Nexperia

PBSS4160PANSX electronic component of Nexperia
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See Product Specifications
Part No.PBSS4160PANSX
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT 60V 1A NPNNPN
Datasheet: PBSS4160PANSX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5115 ea
Line Total: USD 0.51 
Availability - 1807
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4944
10 : USD 0.4829
30 : USD 0.4752
100 : USD 0.4676

1807
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5115
10 : USD 0.3729
100 : USD 0.2849
500 : USD 0.2288
1000 : USD 0.2079
3000 : USD 0.1661
6000 : USD 0.1573
9000 : USD 0.1496

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS4160PANSX from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4160PANSX and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS4160PANS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 February 2015 Product data sheet 1. General description NPN/NPN low V Breakthrough In Small Signal (BISS) transistor in a leadless CEsat medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/PNP complement: PBSS4160PANPS. PNP/PNP complement: PBSS5160PAPS. 2. Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High energy efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints AEC-Q101 qualified 3. Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter open base - - 60 V CEO voltage I collector current - - 1 A C I peak collector current single pulse t 1 ms - - 1.5 A CM pNexperia PBSS4160PANS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Symbol Parameter Conditions Min Typ Max Unit Per transistor R collector-emitter I = 0.5 A I = 50 mA pulsed - - 240 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E1 emitter TR1 6 5 4 C1 B2 E2 2 B1 base TR1 TR2 7 8 3 C2 collector TR2 TR1 4 E2 emitter TR2 E1 B1 C2 1 2 3 5 B2 base TR2 sym140 Transparent top view 6 C1 collector TR1 DFN2020D-6 (SOT1118D) 7 C1 collector TR1 8 C2 collector TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4160PANS DFN2020D-6 DFN2020D-6: plastic, thermally enhanced ultra thin and small SOT1118D outline package no leads 6 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PBSS4160PANS 3F PBSS4160PANS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 11 February 2015 2 / 19

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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