PBSS4160XX Nexperia

PBSS4160X 60 V, 1 A NPN low VCEsat BISS transistor 23 May 2017 Product data sheet 1. General description NPN low V Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) CEsat flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications DC-to-DC conversion Supply line switches Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 60 V CEO voltage I collector current - - 1 A C I peak collector current single pulse t 1 ms - - 2 A CM p h DC current gain V = 10 V I = 500 mA T = 25 C 1 170 - 360 FE CE C amb 1 Pulse test: t 300 s 0.02 pNexperia PBSS4160X 60 V, 1 A NPN low VCEsat BISS transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E emitter C 2 C collector B 3 B base 3 2 1 E SOT89 sym123 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4160X SOT89 plastic, surface-mounted package 3 leads 1.5 mm pitch 4.5 SOT89 mm x 2.5 mm x 1.5 mm body 7. Marking Table 4. Marking codes Type number Marking code PBSS4160X S41 PBSS4160X All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 23 May 2017 2 / 12