X-On Electronics has gained recognition as a prominent supplier of PBSS4220V,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4220V,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4220V,115 Nexperia

PBSS4220V,115 electronic component of Nexperia
PBSS4220V,115 Nexperia
PBSS4220V,115 Bipolar Transistors - BJT
PBSS4220V,115  Semiconductors

Images are for reference only
See Product Specifications
Part No. PBSS4220V,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT LO VCESAT(BISS)TRANS
Datasheet: PBSS4220V,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 4000
Multiples : 4000
4000 : USD 0.0557
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.4896
10 : USD 0.3982
100 : USD 0.2714
500 : USD 0.2036
1000 : USD 0.1527
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.8273
10 : USD 0.5691
100 : USD 0.1243
500 : USD 0.1083
1000 : USD 0.0863
2000 : USD 0.0782
4000 : USD 0.0712
8000 : USD 0.0702
24000 : USD 0.0651
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PBSS4220V,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4220V,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS4220V 20 V, 2 A NPN low V (BISS) transistor CEsat Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface CEsat Mounted Device (SMD) plastic package. PNP complement: PBSS5220V. 1.2 Features Low collector-emitter saturation voltage V CEsat High collector current capability: I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) Portable applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 20 V CEO I collector current - - 2 A C I peak collector current t 300 s --4 A CM p 1 R collector-emitter I =1A - 140 175 m CEsat C saturation resistance I =100 mA B 1 Pulse test: t 300 s 0.02. p

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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