X-On Electronics has gained recognition as a prominent supplier of PBSS4350SPN,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4350SPN,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4350SPN,115 Nexperia

PBSS4350SPN,115 electronic component of Nexperia
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See Product Specifications
Part No.PBSS4350SPN,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
Datasheet: PBSS4350SPN,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1000
Multiples : 1000
1000 : USD 0.2611
2000 : USD 0.2585
3000 : USD 0.2558
4000 : USD 0.2533
5000 : USD 0.2508
6000 : USD 0.2483
10000 : USD 0.2458
20000 : USD 0.2434
50000 : USD 0.241
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.2509
10 : USD 0.568
100 : USD 0.3118
500 : USD 0.2527
1000 : USD 0.2065
2000 : USD 0.1875
5000 : USD 0.1785
10000 : USD 0.1775
25000 : USD 0.1735
N/A

Obsolete
0
MOQ : 38
Multiples : 1
38 : USD 0.8589
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PBSS4350SPN,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4350SPN,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS4350SPN 50 V, 2.7 A NPN/PNP low V (BISS) transistor CEsat Rev. 01 5 April 2007 Product data sheet 1. Product prole 1.1 General description NPN/PNP double low V Breakthrough In Small Signal (BISS) transistor in a medium CEsat power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement Nexperia Name PBSS4350SPN SOT96-1 SO8 PBSS4350SS PBSS5350SS 1.2 Features n Low collector-emitter saturation voltage V CEsat n High collector current capability I and I C CM n High collector current gain (h ) at high I FE C n High efciency due to less heat generation n Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications n Complementary MOSFET driver n Half and full bridge motor drivers n Dual low power switches (e.g. motors, fans) n Automotive 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 NPN low V transistor CEsat V collector-emitter voltage open base - - 50 V CEO I collector current - - 2.7 A C I peak collector current single pulse --5 A CM t 1ms p 1 R collector-emitter I =2A - 90 130 m CEsat C saturation resistance I = 200 mA BPBSS4350SPN Nexperia 50 V, 2.7 A NPN/PNP low V (BISS) transistor CEsat Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit TR2 PNP low V transistor CEsat V collector-emitter voltage open base - - 50- V CEO I collector current - - -2.7 A C I peak collector current single pulse -- -5A CM t 1ms p 1 R collector-emitter I = -2A - 95 140 m CEsat C saturation resistance I = -200 mA B 1 Pulse test: t 300 s 0.02. p 2. Pinning information Table 3. Pinning Pin Description Simplied outline Symbol 1 emitter TR1 8 5 8765 2 base TR1 3 emitter TR2 TR1 TR2 4 base TR2 5 collector TR2 1 4 1234 006aaa985 6 collector TR2 7 collector TR1 8 collector TR1 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PBSS4350SPN SO8 plastic small outline package 8 leads body width SOT96-1 3.9 mm 4. Marking Table 5. Marking codes Type number Marking code PBSS4350SPN 4350SPN PBSS4350SPN 1 Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 5 April 2007 2 of 19

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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