PBSS4350SS,115 Nexperia

PBSS4350SS 50 V, 2.7 A NPN/NPN low V (BISS) transistor CEsat Rev. 01 3 April 2007 Product data sheet 1. Product prole 1.1 General description NPN/NPN double low V Breakthrough In Small Signal (BISS) transistor in a medium CEsat power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/PNP PNP/PNP complement complement Nexperia Name PBSS4350SS SOT96-1 SO8 PBSS4350SPN PBSS5350SS 1.2 Features n Low collector-emitter saturation voltage V CEsat n High collector current capability I and I C CM n High collector current gain (h ) at high I FE C n High efciency due to less heat generation n Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications n Dual low power switches (e.g. motors, fans) n Automotive 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter voltage open base - - 50 V CEO I collector current - - 2.7 A C I peak collector current single pulse --5 A CM t 1ms p 1 R collector-emitter I =2A - 90 130 m CEsat C saturation resistance I = 200 mA B 1 Pulse test: t 300 s 0.02. pPBSS4350SS Nexperia 50 V, 2.7 A NPN/NPN low V (BISS) transistor CEsat 2. Pinning information Table 3. Pinning Pin Description Simplied outline Symbol 1 emitter TR1 8 5 8765 2 base TR1 3 emitter TR2 TR1 TR2 4 base TR2 5 collector TR2 1 4 1234 006aaa966 6 collector TR2 7 collector TR1 8 collector TR1 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PBSS4350SS SO8 plastic small outline package 8 leads body width SOT96-1 3.9 mm 4. Marking Table 5. Marking codes Type number Marking code PBSS4350SS 4350SS 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 50 V CBO V collector-emitter voltage open base - 50 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 2.7 A C I peak collector current single pulse -5 A CM t 1ms p I base current - 0.5 A B 1 P total power dissipation T 25 C - 0.55 W tot amb 2 - 0.87 W 3 - 1.43 W PBSS4350SS 1 Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 3 April 2007 2 of 14