X-On Electronics has gained recognition as a prominent supplier of PBSS4560PA,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4560PA,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4560PA,115 Nexperia

PBSS4560PA,115 electronic component of Nexperia
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Part No.PBSS4560PA,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 60 V 6 A 150MHz 2.1 W Surface Mount 3-HUSON (2x2)
Datasheet: PBSS4560PA,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4741 ea
Line Total: USD 0.47 
Availability - 549
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2672
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 759
Multiples : 1
759 : USD 0.2115
3000 : USD 0.1926

5820
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.156
6000 : USD 0.1512
9000 : USD 0.1508

549
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4741
10 : USD 0.3223
100 : USD 0.2332
500 : USD 0.187
1000 : USD 0.1749
3000 : USD 0.1518
6000 : USD 0.143
9000 : USD 0.1397
24000 : USD 0.1386

2672
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 733
Multiples : 1
733 : USD 0.1717

136731
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 2841
Multiples : 1
2841 : USD 0.1662

5820
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.146

   
Manufacturer
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RoHS - XON
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Emitter- Base Voltage VEBO
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Dc Current Gain Hfe Max
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Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
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We are delighted to provide the PBSS4560PA,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4560PA,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS4560PA 60 V, 6 A NPN low V (BISS) transistor CEsat Rev. 1 19 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra CEsat thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5560PA. 1.2 Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 60 V CEO I collector current - - 6 A C I peak collector current single pulse -- 7 A CM t 1ms p 1 R collector-emitter I =6A -34 48 m CEsat C saturation resistance I =300 mA B 1 Pulse test: t 300 s 0.02. p

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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