PBSS5112PAP,115 Nexperia

PBSS5112PAP 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor 30 November 2012 Product data sheet 1. Product profile 1.1 General description PNP/PNP low V Breakthrough In Small Signal (BISS) transistor in a leadless CEsat medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. NPN/NPN complement: PBSS4112PAN. 1.2 Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation AEC-Q101 qualified 1.3 Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter open base - - -120 V CEO voltage I collector current - - -1 A C I peak collector current single pulse t 1 ms - - -1.5 A CM p V emitter-base voltage open collector - - -7 V EBO Per transistor R collector-emitter I = -500 mA I = -50 mA pulsed - - 440 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p ambNexperia PBSS5112PAP 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E1 emitter TR1 C1 B2 E2 6 5 4 2 B1 base TR1 TR2 7 8 3 C2 collector TR2 TR1 4 E2 emitter TR2 E1 B1 C2 1 2 3 5 B2 base TR2 Transparent top view sym138 6 C1 collector TR1 DFN2020-6 (SOT1118) 7 C1 collector TR1 8 C2 collector TR2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5112PAP DFN2020-6 plastic thermal enhanced ultra thin small outline package no SOT1118 leads 6 terminals body 2 x 2 x 0.65 mm 4. Marking Table 4. Marking codes Type number Marking code PBSS5112PAP 2S 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - -120 V CBO V collector-emitter voltage open base - -120 V CEO V emitter-base voltage open collector - -7 V EBO I collector current - -1 A C I peak collector current single pulse t 1 ms - -1.5 A CM p I base current - -0.3 A B PBSS5112PAP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 30 November 2012 2 / 17