X-On Electronics has gained recognition as a prominent supplier of PBSS5130T,215 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS5130T,215 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS5130T,215 Nexperia

PBSS5130T,215 electronic component of Nexperia
Images are for reference only
See Product Specifications
Part No.PBSS5130T,215
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 30 V 1 A 200MHz 480 mW Surface Mount TO-236AB
Datasheet: PBSS5130T,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0499 ea
Line Total: USD 149.7

Availability - 17460
Ship by Fri. 26 Jul to Thu. 01 Aug
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
8730
Ship by Fri. 26 Jul to Thu. 01 Aug
MOQ : 1565
Multiples : 1
1565 : USD 0.0831
3000 : USD 0.0725
6000 : USD 0.0672
99000 : USD 0.0666

17460
Ship by Fri. 26 Jul to Thu. 01 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.0499
9000 : USD 0.0499
12000 : USD 0.0499
30000 : USD 0.0499
45000 : USD 0.0499

1941
Ship by Fri. 02 Aug to Wed. 07 Aug
MOQ : 5
Multiples : 5
5 : USD 0.1513
50 : USD 0.1222
150 : USD 0.1077
500 : USD 0.0959
3000 : USD 0.0872
6000 : USD 0.0829

7249
Ship by Thu. 01 Aug to Mon. 05 Aug
MOQ : 1
Multiples : 1
1 : USD 0.2725
10 : USD 0.1921
100 : USD 0.0874
1000 : USD 0.0701
3000 : USD 0.0621
99000 : USD 0.061

2395
Ship by Fri. 26 Jul to Thu. 01 Aug
MOQ : 1
Multiples : 1
1 : USD 0.338
10 : USD 0.234
100 : USD 0.1092
195 : USD 0.0858
500 : USD 0.0819

17460
Ship by Fri. 26 Jul to Thu. 01 Aug
MOQ : 18000
Multiples : 3000
18000 : USD 0.0702
99000 : USD 0.0679

8730
Ship by Fri. 26 Jul to Thu. 01 Aug
MOQ : 1565
Multiples : 1
1565 : USD 0.0831

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PBSS5130T,215 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS5130T,215 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS5130T 30 V 1 A PNP low VCEsat (BISS) transistor 9 July 2013 Product data sheet 1. General description PNP low V Breakthrough In Small Signal (BISS) transistor in a small SOT23 CEsat Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Small SMD plastic package Low collector-emitter saturation voltage V CEsat High collector current capability: I and I C CM Higher efficiency due to less heat generation AEC-Q101 qualified 3. Applications DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -30 V CEO voltage I collector current - - -1 A C I peak collector current single pulse t 1 ms - - -3 A CM p R collector-emitter I = -500 mA I = -50 mA pulsed - - 220 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb Scan or click this QR code to view the latest information for this product SOT23

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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