X-On Electronics has gained recognition as a prominent supplier of PBSS5140T,215 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS5140T,215 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS5140T,215 Nexperia

PBSS5140T,215 electronic component of Nexperia
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See Product Specifications
Part No.PBSS5140T,215
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT PNP 40V 1A
Datasheet: PBSS5140T,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.042 ea
Line Total: USD 0.42 
Availability - 13591
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
17460
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0484
9000 : USD 0.0472
12000 : USD 0.0468
30000 : USD 0.0459
45000 : USD 0.0448

13591
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 10
Multiples : 10
10 : USD 0.042
100 : USD 0.034
300 : USD 0.0301
3000 : USD 0.0267
6000 : USD 0.0243
9000 : USD 0.0231

8171
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2607
10 : USD 0.1705
100 : USD 0.0781
1000 : USD 0.0671
3000 : USD 0.0561
9000 : USD 0.0495
24000 : USD 0.0473
45000 : USD 0.044
99000 : USD 0.0429

3031
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.434
10 : USD 0.3164
50 : USD 0.1974
100 : USD 0.1582
217 : USD 0.0798

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS5140T,215 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS5140T,215 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS5140T 40 V, 1 A PNP low V BISS transistor CEsat Rev. 04 29 July 2008 Product data sheet 1. Product prole 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) CEsat small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4140T. 1.2 Features n Low collector-emitter saturation voltage V CEsat n High collector current capability I and I C CM n High collector current gain (h ) at high I FE C n High efciency due to less heat generation 1.3 Applications n General-purpose switching and muting n LCD backlighting n Supply line switching circuits n Battery-driven equipment (mobile phones, video cameras and handheld devices) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - - 40 V CEO I collector current - - -1A C I peak collector current single pulse -- -2A CM t 1ms p 1 R collector-emitter I = - 500 mA - 300 < 500 m CEsat C saturation resistance I = - 50 mA B 1 Pulse test: t 300 s 0.02. p

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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