PBSS5160PAPS Nexperia

PBSS5160PAPS 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 24 November 2014 Product data sheet 1. General description PNP/PNP low V Breakthrough In Small Signal (BISS) transistor in a leadless CEsat medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High energy efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints AEC-Q101 qualified 3. Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter open base - - -60 V CEO voltage I collector current - - -1 A C I peak collector current single pulse t 1 ms - - -1.5 A CM p Per transistor R collector-emitter I = -0.5 A I = -50 mA pulsed - - 360 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb Scan or click this QR code to view the latest information for this productNXP Semiconductors PBSS5160PAPS 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E1 emitter TR1 6 5 4 C1 B2 E2 2 B1 base TR1 TR2 7 8 3 C2 collector TR2 TR1 4 E2 emitter TR2 E1 B1 C2 1 2 3 5 B2 base TR2 sym138 Transparent top view 6 C1 collector TR1 DFN2020D-6 (SOT1118D) 7 C1 collector TR1 8 C2 collector TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5160PAPS DFN2020D-6 DFN2020D-6: plastic, thermally enhanced ultra thin and small SOT1118D outline package no leads 6 terminals body 2 x 2 x 0.65 mm 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - -60 V CBO V collector-emitter voltage open base - -60 V CEO V emitter-base voltage open collector - -7 V EBO I collector current - -1 A C I peak collector current single pulse t 1 ms - -1.5 A CM p I base current - -0.3 A B I peak base current single pulse t 1 ms - -1 A BM p P total power dissipation T 25 C 1 - 370 mW tot amb 2 - 570 mW 3 - 530 mW 4 - 700 mW PBSS5160PAPS All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 24 November 2014 2 / 19