The PBSS5160T-QR is a Bipolar Transistor with Junction Field Effect Transistor in an SOT23 package and connected to a TO-236AB. The device is manufactured by Nexperia. The PNP bipolar transistor has an integrated N-channel JFET. It offers high current gain, low collector-emitter saturations, and a very low leakage current. It is suitable for switching, amplifying, and driving applications. The device can handle DC collector current up to 0.6A. The absolute maximum VCE collector-emitter voltage is 40V and the maximum Pd power dissipation is 500mW. The applications of the PBSS5160T-QR include driver and pre-driver stages in display controllers, audio stages, audio and video systems, medical equipment, instrumentation, office automation products, handheld devices, and lighting systems.