X-On Electronics has gained recognition as a prominent supplier of PBSS5230QAZ Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS5230QAZ Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS5230QAZ Nexperia

PBSS5230QAZ electronic component of Nexperia
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Part No.PBSS5230QAZ
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 30 V, 2A PNP low VCE sat (BISS) transi
Datasheet: PBSS5230QAZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.9631
10 : USD 0.6576
100 : USD 0.1435
500 : USD 0.1253
1000 : USD 0.1005
2500 : USD 0.0901
5000 : USD 0.0839
10000 : USD 0.0808
25000 : USD 0.0756
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the PBSS5230QAZ from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS5230QAZ and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS5230QA 30 V, 2 A PNP low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1. General description PNP low V Breakthrough In Small Signal (BISS) transistor in a leadless ultra small CEsat DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4230QA. 2. Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified 3. Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -30 V CEO voltage I collector current - - -2 A C I peak collector current t 1 ms pulsed - - -3 A CM p R collector-emitter I = -1 A I = -100 mA pulsed - 120 180 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p ambNexperia PBSS5230QA 30 V, 2 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 1 2 E emitter B 3 C collector 4 3 E sym132 4 C collector 2 Transparent top view DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5230QA DFN1010D-3 plastic thermal enhanced ultra thin small outline package no SOT1215 leads 3 terminals 7. Marking Table 4. Marking codes Type number Marking code PBSS5230QA 00 00 10 READING DIRECTION MARKING CODE (EXAMPLE) YEAR DATE CODE VENDOR CODE PIN 1 MARK-FREE AREA INDICATION MARK READING EXAMPLE: 11 01 10 aaa-008041 Fig. 1. DFN1010D-3 (SOT1215) binary marking code description PBSS5230QA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 23 August 2013 2 / 17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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