X-On Electronics has gained recognition as a prominent supplier of PBSS5250X,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS5250X,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS5250X,115 Nexperia

PBSS5250X,115 electronic component of Nexperia
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Part No.PBSS5250X,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 50 V 2 A 100MHz 1 W Surface Mount SOT-89
Datasheet: PBSS5250X,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.0929 ea
Line Total: USD 92.9 
Availability - 2910
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
81
Ship by Tue. 10 Dec to Fri. 13 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1812
50 : USD 0.1455
150 : USD 0.1303
1000 : USD 0.1113
2000 : USD 0.1028
5000 : USD 0.0976

1312
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 0.406
10 : USD 0.3052
50 : USD 0.2114
100 : USD 0.182
128 : USD 0.1316

8476
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 992
Multiples : 1
992 : USD 0.131

9700
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 10000
Multiples : 10000
10000 : USD 0.1744

2910
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.0929

   
Manufacturer
Product Category
Package / Case
Transistor Polarity
Packaging
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Ic @ Vce Sat
Current Ic Continuous A Max
Current Ic Hfe
Full Power Rating Temperature
Gain Bandwidth Ft Typ
Hfe Min
Operating Temperature Min
Operating Temperature Range
Power Dissipation Ptot Max
Voltage Vcbo
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We are delighted to provide the PBSS5250X,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS5250X,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5250X 50 V, 2 A PNP low V (BISS) transistor CEsat Product data sheet 2004 Nov 04 Supersedes data of 2003 Jun 17NXP Semiconductors Product data sheet 50 V, 2 A PBSS5250X PNP low V (BISS) transistor CEsat FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitter saturation voltage V CEsat V collector-emitter voltage 50 V CEO High collector current capability: I and I C CM I collector current (DC) 2 A C Higher efficiency leading to less heat generation I peak collector current 5 A CM Reduced printed-circuit board requirements. R equivalent on-resistance 160 m CEsat PINNING APPLICATIONS Power management PIN DESCRIPTION DC/DC converters 1 emitter Supply line switching 2 collector Battery charger 3 base LCD backlighting. Peripheral drivers Driver in low supply voltage applications (e.g. lamps and LEDs). Inductive load driver (e.g. relays, 2 buzzers and motors). 3 DESCRIPTION 1 PNP low V transistor in a SOT89 plastic package. CEsat sym079 321 NPN complement: PBSS4250X. MARKING Fig.1 Simplified outline (SOT89) and symbol. (1) TYPE NUMBER MARKING CODE PBSS5250X *1L Note 1. * = p: Made in Hong Kong * = t: Made in Malaysia * = W: Made in China. 2004 Nov 04 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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