PBSS5350THR Nexperia

PBSS5350TH 50 V, 3 A PNP low VCEsat (BISS) transistor 21 June 2017 Product data sheet 1. General description PNP low V Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) CEsat Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability: I and I C CM High collector current gain (h ) at high I FE C Higher efficiency leading to less heat genereation High temperature applications up to 175 C AEC-Q101 qualified 3. Applications Power management DC-to-DC conversion Supply line switches Battery charger switches Peripheral drivers Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -50 V CEO voltage I collector current - - -2 A C I peak collector current pulsed 1 - - -3 A CM single pulse t < 1 ms - - -5 A p R collector-emitter I = -2 A I = -200 mA T = 25 C 2 - - 135 m CEsat C B amb saturation resistance 1 Pulse conditions: pulse width t 100 ms duty cycle 0.25 p 2 Pulse test: t 300 s 0.02 pNexperia PBSS5350TH 50 V, 3 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 3 C 2 E emitter B 3 C collector E sym132 1 2 TO-236AB (SOT23) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5350TH TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 PBSS5350TH FJ% 1 % = placeholder for manufacturing site code PBSS5350TH All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 21 June 2017 2 / 14