X-On Electronics has gained recognition as a prominent supplier of PBSS8110X,135 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS8110X,135 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS8110X,135 Nexperia

PBSS8110X,135 electronic component of Nexperia
PBSS8110X,135 Nexperia
PBSS8110X,135 Bipolar Transistors - BJT
PBSS8110X,135  Semiconductors

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See Product Specifications
Part No. PBSS8110X,135
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT LO VCESAT(BISS)TRANS
Datasheet: PBSS8110X,135 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4000: USD 0.0975 ea
Line Total: USD 390 
Availability - 7760
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
6620
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 645
Multiples : 1
645 : USD 0.2016
1000 : USD 0.1662
3000 : USD 0.1357
6000 : USD 0.1116

14
Ship by Fri. 14 Mar to Wed. 19 Mar
MOQ : 5
Multiples : 5
5 : USD 0.434
50 : USD 0.3453
150 : USD 0.237
500 : USD 0.2004
2500 : USD 0.1843
4000 : USD 0.1746

7760
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 4000
Multiples : 4000
4000 : USD 0.0975
8000 : USD 0.0966

20082
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 347
Multiples : 1
347 : USD 0.1872
500 : USD 0.1625
1000 : USD 0.1456
4000 : USD 0.1025

6620
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 645
Multiples : 1
645 : USD 0.2016

3880
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 4000
Multiples : 4000
4000 : USD 0.1199

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Cnhts
Hts Code
Mxhts
Product Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS8110X,135 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS8110X,135 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS8110X 100 V, 1 A NPN low V (BISS) transistor CEsat Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ CEsat TO-243) SMD plastic package. PNP complement: PBSS9110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage V CEsat High collector current capability: I and I C CM High efficiency leading to less heat generation 1.3 Applications Major application segments: Automotive 42 V power Telecom infrastructure Industrial Peripheral driver: Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) DC-to-DC converter 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 100 V CEO I collector current (DC) - - 1 A C I peak collector current single pulse --3 A CM t 1ms p 1 R collector-emitter I =1A - 165 200 m CEsat C saturation resistance I =100 mA B 1 Pulse test: t 300 s 0.02. p

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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