X-On Electronics has gained recognition as a prominent supplier of PBSS8110Y,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS8110Y,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS8110Y,115 Nexperia

Name: PBSS8110Y,115
Brand: Nexperia
SKU: PBSS8110Y115_Nexperia
Availability: InStock
Rating: 5 (11 reviews)

PBSS8110Y,115 electronic component of Nexperia

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See Product Specifications

Part No.	PBSS8110Y,115
Manufacturer:	Nexperia
Category:	Bipolar Transistors - BJT
Description:	Bipolar (BJT) Transistor NPN 100 V 1 A 100MHz 625 mW Surface Mount 6-TSSOP
Datasheet:	PBSS8110Y,115 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.4325 ea
Line Total: USD 0.43

Availability - 5158
Ship by Wed. 05 Mar to Fri. 07 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

PBSS8110Y,115 More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

5158

Ship by Wed. 05 Mar to Fri. 07 Mar

MOQ : 1
Multiples : 1

1 : USD 0.4325
10 : USD 0.275
100 : USD 0.1668
500 : USD 0.1155
1000 : USD 0.0946
3000 : USD 0.0869
9000 : USD 0.0759
24000 : USD 0.0726

Specifications

Manufacturer

Nexperia Nexperia

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

RoHS - XON

Y Y

Mounting Style

Smd/Smt Smd/Smt

Package / Case

UMT UMT

Transistor Polarity

Npn Npn

Configuration

Single Single

Maximum DC Collector Current

1 A 1 A

Collector- Emitter Voltage VCEO Max

100 V 100 V

Collector- Base Voltage VCBO

120 V 120 V

Emitter- Base Voltage VEBO

5 V 5 V

Pd - Power Dissipation

625 mW 625 mW

Gain Bandwidth Product fT

100 Mhz 100 Mhz

Minimum Operating Temperature

- 65 C - 65 C

Maximum Operating Temperature

+ 150 C + 150 C

Packaging

Reel Reel

Dc Current Gain Hfe Max

150 @ 1 mA @ 10 v 150 @ 1 mA @ 10 v

Brand

Nexperia Nexperia

Dc Collector/Base Gain Hfe Min

150 At 1 Ma At 10 V, 150 At 250 Ma At 10 V, 100 At 0.5 A At 10 V, 80 At 1 A At 10 V 150 At 1 Ma At 10 V, 150 At 250 Ma At 10 V, 100 At 0.5 A At 10 V, 80 At 1 A At 10 V

Factory Pack Quantity :

3000 3000

Height

1 mm 1 mm

Length

2.2 mm 2.2 mm

Cnhts

8541290000 8541290000

Hts Code

8541290075 8541290075

Mxhts

85412999 85412999

Product Type

Bjts - Bipolar Transistors Bjts - Bipolar Transistors

Subcategory

Transistors Transistors

Taric

8541290000 8541290000

Notes:- Show Stocked Products With Similar Attributes.

PBSS8110Y,115 Alternative Parts

We are delighted to provide the PBSS8110Y,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS8110Y,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS8110Y 100 V, 1 A NPN low V (BISS) transistor CEsat Rev. 02 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low V transistor in a SOT363 (SC-88) plastic package. CEsat 1.2 Features SOT363 package Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High efficiency reduces heat generation 1.3 Applications Major application segments: Automotive 42 V power Telecom infrastructure Industrial Peripheral driver: Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) DC-to-DC converter 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage - - 100 V CEO I collector current (DC) - - 1 A C I peak collector current - - 3 A CM R equivalent on-resistance - - 200 m CEsat

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

NEXPERIA USA INC
Nexperia USA Inc.

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Availability	Price	Buy Price	Quantity
5158 Ship by Wed. 05 Mar to Fri. 07 Mar MOQ : 1 Multiples : 1	1 : USD 0.4325 10 : USD 0.275 100 : USD 0.1668 500 : USD 0.1155 1000 : USD 0.0946 3000 : USD 0.0869 9000 : USD 0.0759 24000 : USD 0.0726

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