PBSS9110D,115 Nexperia

PBSS9110D 100 V, 1 A PNP low V (BISS) transistor CEsat Rev. 03 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) CEsat small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS8110D. 1.2 Features Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 100 V CEO I collector current - - 1A C I peak collector current single pulse -- 3A CM t 1ms p 1 R collector-emitter I = 1A - 170 320 m CEsat C saturation resistance I = 100 mA B 1 Pulse test: t 300 s 0.02. pNXP Semiconductors PBSS9110D 100 V, 1 A PNP low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1, 2, 5, 6 collector 6 5 4 1, 2, 5, 6 3base 4emitter 3 132 4 sym030 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS9110D SC-74 plastic surface-mounted package (TSOP6) 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PBSS9110D A7 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 120 V CBO V collector-emitter voltage open base - 100 V CEO V emitter-base voltage open collector - 5V EBO I collector current - 1A C I peak collector current single pulse - 3A CM t 1ms p I base current - 0.3 A B 1 P total power dissipation T 25 C -300 mW tot amb 2 -550 mW 3 -700 mW PBSS9110D 3 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 22 November 2009 2 of 13