X-On Electronics has gained recognition as a prominent supplier of PBSS9110X,135 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS9110X,135 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS9110X,135 Nexperia

PBSS9110X,135 electronic component of Nexperia
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Part No.PBSS9110X,135
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 100 V 1 A 100MHz 2 W Surface Mount SOT-89
Datasheet: PBSS9110X,135 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4250: USD 0.1148 ea
Line Total: USD 487.9 
Availability - 7760
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ: 4250  Multiples: 1
Pack Size: 1
Availability Price Quantity
1689
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 696
Multiples : 1
696 : USD 0.1596
4000 : USD 0.1479
8000 : USD 0.1352

1689
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 66
Multiples : 1
66 : USD 0.1972

19400
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 4000
Multiples : 4000
4000 : USD 0.1526
8000 : USD 0.1247
24000 : USD 0.1211
100000 : USD 0.1184

7760
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 4250
Multiples : 1
4250 : USD 0.1148

   
Manufacturer
Product Category
Package / Case
Transistor Polarity
Packaging
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Collector Emitter Saturation Voltage Vceon
Current Ic Continuous A Max
Gain Bandwidth Ft Typ
Hfe Min
Operating Temperature Min
Operating Temperature Range
Termination Type
Transistor Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS9110X,135 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS9110X,135 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS9110X 100 V, 1 A PNP low V (BISS) transistor CEsat Rev. 02 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ CEsat TO-243) SMD plastic package. NPN complement: PBSS8110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High efficiency leading to less heat generation 1.3 Applications Major application segments: Automotive 42 V power Telecom infrastructure Industrial Peripheral driver: Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) DC-to-DC conversion 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 100 V CEO I collector current (DC) - - 1A C I peak collector current single pulse -- 3A CM t 1ms p 1 R collector-emitter saturation I = 1A -170 320 m CEsat C resistance I = 100 mA B 1 Pulse test: t 300 s 0.02. p

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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