X-On Electronics has gained recognition as a prominent supplier of PDTB123ET across the USA, India, Europe, Australia, and various other global locations. PDTB123ET are a product manufactured by Nexperia. We provide cost-effective solutions for PDTB123ET, ensuring timely deliveries around the world.

PDTB123ET Nexperia

PDTB123ET electronic component of Nexperia
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See Product Specifications
Part No.PDTB123ET
Manufacturer: Nexperia
Category: Unclassified
Description: TRANSISTOR, PNP, 50V, 0.5A, SOT-23
Datasheet: PDTB123ET Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
500: USD 0.0994 ea
Line Total: USD 49.7 
Availability - 0
MOQ: 500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 500
Multiples : 1
500 : USD 0.0994
1000 : USD 0.0541
5000 : USD 0.0425

   
Manufacturer
Product Category
Brand
Digital Transistor Polarity
Collector Emitter Voltage Vbrceo
Continuous Collector Current Ic
Base Input Resistor R1
Base-Emitter Resistor R2
Rf Transistor Case
No. Of Pins
Product Range
Msl
Svhc
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Dc Collector Current
Dc Current Gain Hfe
Hfe Min
Operating Temperature Max
Operating Temperature Min
Operating Temperature Range
Power Dissipation Pd
Resistance R1
Resistance R2
Termination Type
Transistor Case Style
Transistor Polarity
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We are delighted to provide the PDTB123ET from our Nexperia manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PDTB123ET and other electronic components in the Nexperia manufacturer and beyond.

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PDTB123ET PNP 500 mA, 50 V resistor-equipped transistor R1 = 2.2 k , R2 = 2.2 k Rev. 3 22 September 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123ET. 1.2 Features and benefits 500 mA output current capability Reduces pick and place costs Built-in bias resistors 10 % resistor ratio tolerance Simplifies circuit design AEC-Q101 qualified Reduces component count 1.3 Applications Digital application in automotive and Cost-saving alternative for BC807 series industrial segments in digital applications Control of IC inputs Switching loads 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 50 V CEO I output current - - 500 mA O R1 bias resistor 1 (input) 1.54 2.2 2.86 k R2/R1 bias resistor ratio 0.9 1.0 1.1PDTB123ET NXP Semiconductors PNP 500 mA resistor-equipped transistor R1 = 2.2 k , R2 = 2.2 k 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 input (base) 3 3 2 GND (emitter) R1 1 3 output (collector) R2 12 2 006aaa144 sym003 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PDTB123ET - plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PDTB123ET *7S 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 50 V CBO V collector-emitter voltage open base - 50 V CEO V emitter-base voltage open collector - 10 V EBO V input voltage I positive - +10 V negative - 12 V I output current - 500 mA O PDTB123ET All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 22 September 2010 2 of 10

NEXPERIA USA INC
Nexperia USA Inc.
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