PESD3V3S4UF,115 Nexperia

PESD3V3S4UF PESD5V0S4UF Unidirectional quadruple ESD protection diode arrays Rev. 01 17 January 2008 Product data sheet 1. Product prole 1.1 General description Unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in a small SOT886 Surface-Mounted Device (SMD) plastic package designed to protect up to four signal lines from the damage caused by ESD and other transients. 1.2 Features n ESD protection of up to four lines n ESD protection up to 30 kV n Max. peak pulse power: P = 110 W n IEC 61000-4-2 level 4 (ESD) PP n Low clamping voltage: V =11V n IEC 61000-4-5 (surge) I =10A CL PP n Ultra low leakage current: I =4nA n AEC-Q101 qualied RM 1.3 Applications n Computers and peripherals n Communication systems n Audio and video equipment n Portable electronics n Cellular handsets and accessories 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specied. amb Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse standoff voltage RWM PESD3V3S4UF - - 3.3 V PESD5V0S4UF - - 5.0 V C diode capacitance f = 1 MHz V =0V d R PESD3V3S4UF - 110 300 pF PESD5V0S4UF - 85 220 pFPESD3V3S4UF PESD5V0S4UF Nexperia Unidirectional quadruple ESD protection diode arrays 2. Pinning information Table 2. Pinning Pin Description Simplied outline Symbol 1 cathode (diode 1) 1 2 3 2 common anode 1 6 3 cathode (diode 2) 2 5 4 cathode (diode 3) 3 4 5 common anode 006aaa156 6 5 4 6 cathode (diode 4) bottom view 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD3V3S4UF XSON6 plastic extremely thin small outline package SOT886 no leads 6 terminals body 1 1.45 0.5 mm PESD5V0S4UF 4. Marking Table 4. Marking codes 1 Type number Marking code PESD3V3S4UF A3 PESD5V0S4UF A4 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode 1 2 P peak pulse power t = 8/20 s - 110 W PP p 1 2 I peak pulse current t = 8/20 s -10 A PP p PESD3V3S4UF PESD5V0S4UF 1 Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 17 January 2008 2 of 13