PESD12VS2UAT,215 NXP

DISCRETE SEMICONDUCTORS DATA SHEET PESDxS2UAT series Double ESD protection diodes in SOT23 package Product data sheet 2004 Feb 18NXP Semiconductors Product data sheet Double ESD protection diodes PESDxS2UAT series in SOT23 package FEATURES QUICK REFERENCE DATA Unidirectional ESD protection of up to two lines SYMBOL PARAMETER VALUE UNIT Common-cathode configuration V reverse stand-off 3.3, 5, 12, 15 V RWM Max. peak pulse power: P = 330 W at t = 8/20 s voltage and 24 pp p C diode capacitance 207, 152, 38, 32 pF Low clamping voltage: V = 20 V at I = 18 A d (CL)R pp V = 0 V and 23 R Ultra-low reverse leakage current: I < 700 nA RM f = 1 MHz ESD protection > 30 kV number of 2 IEC 61000-4-2 level 4 (ESD) protected lines IEC 61000-4-5 (surge) I = 18 A at t = 8/20 s. pp p PINNING APPLICATIONS PIN DESCRIPTION Computers and peripherals 1 anode 1 Communication systems 2 anode 2 Audio and video equipment 3 common cathode Data lines CAN bus protection. DESCRIPTION Unidirectional double ESD protection diodes in common cathode configuration in the SOT23 plastic package. 1 Designed to protect up to two transmission or data lines against damage from ElectroStatic Discharge (ESD) and 3 1 other transients. 3 2 2 MARKING (1) sym002 001aaa401 TYPE NUMBER MARKING CODE PESD3V3S2UAT *7A PESD5V0S2UAT *7B PESD12VS2UAT *7C PESD15VS2UAT *7D Fig.1 Simplified outline (SOT23) and symbol. PESD24VS2UAT *7E Note 1. * = p : made in Hong Kong. * = t : made in Malaysia. * = W : made in China. 2004 Feb 18 2