PHPT61002NYCX Nexperia

PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation 3. Applications Load switch Power management Linear mode voltage regulator Backlighting apllications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 100 V CEO voltage I collector current - - 2 A C I peak collector current single pulse t 1 ms - - 6 A CM p R collector-emitter I = 2 A I = 200 mA pulsed - 80 150 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p ambNexperia PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E emitter mb C 2 E emitter B 3 E emitter E 4 B base sym123 1 2 3 4 mb C collector LFPAK56 Power- SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PHPT61002NYC LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PHPT61002NYC 1002NCA PHPT61002NYC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 9 January 2014 2 / 15