X-On Electronics has gained recognition as a prominent supplier of PMBT3904,235 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PMBT3904,235 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PMBT3904,235 Nexperia

PMBT3904,235 electronic component of Nexperia
PMBT3904,235 Nexperia
PMBT3904,235 Bipolar Transistors - BJT
PMBT3904,235  Semiconductors

Images are for reference only
See Product Specifications
Part No. PMBT3904,235
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 250 mW Surface Mount TO-236AB
Datasheet: PMBT3904,235 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10000: USD 0.0153 ea
Line Total: USD 153 
Availability - 77600
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
48500
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 10000
Multiples : 10000
10000 : USD 0.0096
30000 : USD 0.0093
50000 : USD 0.0092
100000 : USD 0.009
200000 : USD 0.0088

28205
Ship by Fri. 17 Jan to Wed. 22 Jan
MOQ : 20
Multiples : 20
20 : USD 0.0203
200 : USD 0.0177
600 : USD 0.0162
2000 : USD 0.0154
10000 : USD 0.0146
20000 : USD 0.0143

35539
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 1
1 : USD 0.1023
10 : USD 0.0495
100 : USD 0.0264
1000 : USD 0.0198
2500 : USD 0.0176
10000 : USD 0.0154
20000 : USD 0.0099
100000 : USD 0.0088

77600
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 10000
Multiples : 10000
10000 : USD 0.0153
20000 : USD 0.0087
30000 : USD 0.0086
70000 : USD 0.0085

43004
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 676
Multiples : 1
676 : USD 0.111

19400
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 6667
Multiples : 1
6667 : USD 0.0208

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PMBT3904,235 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMBT3904,235 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PMBT3904 40 V, 200 mA NPN switching transistor 5 November 2020 Product data sheet 1. General description NPN switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT3906 2. Features and benefits Collector current capability I = 200 mA C Collector-emitter voltage V = 40 V CEO 3. Applications General switching and amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 40 V CEO voltage I collector current - - 200 mA C h DC current gain V = 1 V I = 10 mA 1 100 - 300 FE CE C 1 Pulsed test: t 300 s 0.02 p 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 3 C 2 E emitter B 3 C collector E sym021 1 2 SOT23Nexperia PMBT3904 40 V, 200 mA NPN switching transistor 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMBT3904 SOT23 plastic, surface-mounted package 3 terminals 1.9 mm pitch 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 %1A PMBT3904 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 40 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 200 mA C I peak collector current single pulse t 1 ms - 200 mA CM p I peak base current - 100 mA BM P total power dissipation T 25 C 1 - 250 mW tot amb T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from 1 - - 500 K/W th(j-a) junction to ambient 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMBT3904 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 5 November 2020 2 / 11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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