X-On Electronics has gained recognition as a prominent supplier of PMBT3906VS Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PMBT3906VS Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PMBT3906VS Nexperia

PMBT3906VS electronic component of Nexperia
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See Product Specifications
Part No.PMBT3906VS
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: TRANSISTOR, PNP/PNP, 40V, 200MA, SOT666
Datasheet: PMBT3906VS Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.4367 ea
Line Total: USD 2.18 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 5
Multiples : 1
5 : USD 0.4367
100 : USD 0.2623
500 : USD 0.1797
1000 : USD 0.1385
2000 : USD 0.1247

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
Transition Frequency Ft
LoadingGif
 
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We are delighted to provide the PMBT3906VS from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMBT3906VS and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PMBT3906VS 40 V, 200 mA PNP/PNP switching transistor Rev. 01 20 August 2009 Product data sheet 1. Product prole 1.1 General description PNP/PNP double switching transistor in a SOT666 ultra small and at lead Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP complement complement NXP JEITA PMBT3906VS SOT666 - PMBT3904VS PMBT3946VPN 1.2 Features n Double general-purpose switching transistor n Board-space reduction n AEC-Q101 qualied n Ultra small and at lead SMD plastic package 1.3 Applications n General-purpose switching and amplication 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter voltage open base - - - 40 V CEO I collector current - - - 200 mA C h DC current gain V = - 1V 100 180 300 FE CE I = - 10 mA CPMBT3906VS NXP Semiconductors 40 V, 200 mA PNP/PNP switching transistor 2. Pinning information Table 3. Pinning Pin Description Simplied outline Graphic symbol 1 emitter TR1 6 5 4 6 5 4 2 base TR1 3 collector TR2 TR2 TR1 4 emitter TR2 5 base TR2 12 3 1 2 3 6 collector TR1 sym018 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PMBT3906VS - plastic surface-mounted package 6 leads SOT666 4. Marking Table 5. Marking codes Type number Marking code PMBT3906VS ZD 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - - 40 V CBO V collector-emitter voltage open base - - 40 V CEO V emitter-base voltage open collector - -6V EBO I collector current - - 200 mA C I peak collector current single pulse - - 200 mA CM t 1ms p I peak base current single pulse - - 100 mA BM t 1ms p 1 2 P total power dissipation T 25 C - 240 mW tot amb Per device 1 2 P total power dissipation T 25 C - 360 mW tot amb PMBT3906VS 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 20 August 2009 2 of 11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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