X-On Electronics has gained recognition as a prominent supplier of PMBT5551,215 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PMBT5551,215 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PMBT5551,215 Nexperia

PMBT5551,215 electronic component of Nexperia
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Part No.PMBT5551,215
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 160V; 300mA; 250mW; SOT23
Datasheet: PMBT5551,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6000: USD 0.0224 ea
Line Total: USD 134.4 
Availability - 698400
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ: 6000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
34920
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0295
9000 : USD 0.0295
15000 : USD 0.0295
45000 : USD 0.0295
75000 : USD 0.0295

2361
Ship by Fri. 29 Nov to Wed. 04 Dec
MOQ : 10
Multiples : 10
10 : USD 0.0438
100 : USD 0.0352
300 : USD 0.0307
3000 : USD 0.0277
6000 : USD 0.0249
9000 : USD 0.0237

24599
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1559
10 : USD 0.0994
100 : USD 0.0531
1000 : USD 0.0485
3000 : USD 0.0393
9000 : USD 0.0346
24000 : USD 0.0312
45000 : USD 0.0277

17724
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 146
Multiples : 1
146 : USD 0.0441
250 : USD 0.044
500 : USD 0.0438
1000 : USD 0.0435
3000 : USD 0.0434
6000 : USD 0.0433
15000 : USD 0.043

37830
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0437
9000 : USD 0.0367
24000 : USD 0.026

698400
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 6000
Multiples : 3000
6000 : USD 0.0224
360000 : USD 0.0205
540000 : USD 0.0191
720000 : USD 0.018

20370
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0426
9000 : USD 0.0358
24000 : USD 0.0287

1324050
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 14564
Multiples : 1
14564 : USD 0.0352

209520
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 14564
Multiples : 1
14564 : USD 0.0352

189150
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0456
9000 : USD 0.0384
24000 : USD 0.0256
45000 : USD 0.0254

512160
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 14564
Multiples : 1
14564 : USD 0.0352

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMBT5551,215 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMBT5551,215 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PMBT5551 NPN high-voltage transistor 31 August 2020 Product data sheet 1. General description NPN high-voltage transistor in a SOT23 plastic package. 2. Features and benefits Low current (max. 300 mA) High voltage (max. 160 V) AEC-Q101 qualified 3. Applications General purpose 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 160 V CEO voltage I collector current - - 300 mA C 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 1 B base C 2 E emitter B 3 C collector E 1 2 sym123 SOT23 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMBT5551 SOT23 plastic, surface-mounted package 3 terminals 1.9 mm pitch 2.9 SOT23 mm x 1.3 mm x 1 mm bodyNexperia PMBT5551 NPN high-voltage transistor 7. Marking Table 4. Marking codes Type number Marking code 1 PMBT5551 %G1 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 180 V CBO V collector-emitter voltage open base - 160 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 300 mA C I peak collector current single pulse t 1 ms - 600 mA CM p I peak base current - 100 mA BM P total power dissipation T 25 C 1 - 250 mW tot amb T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air 1 - - 500 K/W th(j-a) junction to ambient 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. PMBT5551 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 31 August 2020 2 / 8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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