X-On Electronics has gained recognition as a prominent supplier of PMBT5551,235 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PMBT5551,235 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PMBT5551,235 Nexperia

PMBT5551,235 electronic component of Nexperia
PMBT5551,235 Nexperia
PMBT5551,235 Bipolar Transistors - BJT
PMBT5551,235  Semiconductors

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See Product Specifications
Part No. PMBT5551,235
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT TRANS SW TAPE-11
Datasheet: PMBT5551,235 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1672 ea
Line Total: USD 0.17 
Availability - 18334
Ship by Wed. 22 Jan to Fri. 24 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
18334
Ship by Wed. 22 Jan to Fri. 24 Jan
MOQ : 1
Multiples : 1
1 : USD 0.1672
10 : USD 0.1133
100 : USD 0.0583
1000 : USD 0.0473
2500 : USD 0.0418
10000 : USD 0.0308
100000 : USD 0.0297

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMBT5551,235 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMBT5551,235 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PMBT5551 NPN high-voltage transistor 31 August 2020 Product data sheet 1. General description NPN high-voltage transistor in a SOT23 plastic package. 2. Features and benefits Low current (max. 300 mA) High voltage (max. 160 V) AEC-Q101 qualified 3. Applications General purpose 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 160 V CEO voltage I collector current - - 300 mA C 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 1 B base C 2 E emitter B 3 C collector E 1 2 sym123 SOT23 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMBT5551 SOT23 plastic, surface-mounted package 3 terminals 1.9 mm pitch 2.9 SOT23 mm x 1.3 mm x 1 mm bodyNexperia PMBT5551 NPN high-voltage transistor 7. Marking Table 4. Marking codes Type number Marking code 1 PMBT5551 %G1 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 180 V CBO V collector-emitter voltage open base - 160 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 300 mA C I peak collector current single pulse t 1 ms - 600 mA CM p I peak base current - 100 mA BM P total power dissipation T 25 C 1 - 250 mW tot amb T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air 1 - - 500 K/W th(j-a) junction to ambient 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. PMBT5551 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 31 August 2020 2 / 8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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