X-On Electronics has gained recognition as a prominent supplier of PQMD3Z Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PQMD3Z Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PQMD3Z Nexperia

PQMD3Z electronic component of Nexperia
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See Product Specifications
Part No.PQMD3Z
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PQMD3/DFN1010B-6/REEL 7" Q2/T3
Datasheet: PQMD3Z Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2921 ea
Line Total: USD 0.29 
Availability - 86
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
86
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2921
10 : USD 0.1806
100 : USD 0.0851
1000 : USD 0.0598
5000 : USD 0.0471
10000 : USD 0.046
25000 : USD 0.046
100000 : USD 0.0437

   
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We are delighted to provide the PQMD3Z from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PQMD3Z and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PQMD3 NPN/PNP resistor-equipped transistors R1 = 10 k, R2 = 10 k 26 October 2015 Product data sheet 1. General description NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PQMH11 PNP/PNP complement: PQMB11 2. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Low package height of 0.37 mm Reduces component count Reduces pick and place costs AEC-Q101 qualified 3. Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor for the PNP transistor with negative polarity V collector-emitter open base - - 50 V CEO voltage I output current - - 100 mA O Per transistor for the PNP transistor with negative polarity R1 bias resistor 1 T = 25 C 1 7 10 13 k amb R2/R1 bias resistor ratio 1 0.8 1 1.2 1 See sectionTest informatio for resistor calculation and test conditions.Nexperia PQMD3 NPN/PNP resistor-equipped transistors R1 = 10 k, R2 = 10 k 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol O1 I2 GND2 1 GND1 GND (emitter) TR1 1 6 7 2 I1 input ( base) TR1 R1 R2 3 O2 output (collector) TR2 2 5 TR2 4 GND2 GND (emitter) TR2 TR1 8 3 4 R2 R1 5 I2 input ( base) TR2 6 O1 output (collector) TR1 Transparent top view GND1 I1 O2 7 O1 output (collector) TR1 DFN1010B-6 (SOT1216) aaa-007379 8 O2 output (collector) TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PQMD3 DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small SOT1216 outline package no leads 6 terminals PQMD3 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 26 October 2015 2 / 17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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