X-On Electronics has gained recognition as a prominent supplier of PZT4403,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PZT4403,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PZT4403,115 Nexperia

PZT4403,115 electronic component of Nexperia
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Part No.PZT4403,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 1.15 W Surface Mount SOT-223
Datasheet: PZT4403,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4092 ea
Line Total: USD 0.41 
Availability - 21850
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
21850
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4092
10 : USD 0.2739
100 : USD 0.1408
1000 : USD 0.1254
2000 : USD 0.1067
25000 : USD 0.0968

1953
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 710
Multiples : 1
710 : USD 0.1712

5820
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.1656
2000 : USD 0.1353
25000 : USD 0.1183

15520
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 4831
Multiples : 1
4831 : USD 0.1009

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
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We are delighted to provide the PZT4403,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PZT4403,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PZT4403 40 V, 600 mA PNP switching transistor Rev. 03 2 March 2010 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a medium power SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PZT4401. 1.2 Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) 1.3 Applications Switching and linear amplification 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Max Unit V collector-emitter voltage open base - - 40 V CEO I collector current - - 600 mA C 1 h DC current gain V = 1V 100 - 300 FE CE I = 150 mA C 1 Pulse test: t 300 s 0.02. p 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 4 2, 4 2, 4 collector 3emitter 1 132 3 sym028PZT4403 Nexperia 40 V, 600 mA PNP switching transistor 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PZT4403 SC-73 plastic surface-mounted package with increased SOT223 heatsink 4 leads 4. Marking Table 4. Marking codes Type number Marking code PZT4403 ZT4403 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 40 V CBO V collector-emitter voltage open base - 40 V CEO V emitter-base voltage open collector - 6V EBO I collector current - 600 mA C I peak collector current - 800 mA CM I peak base current - 200 mA BM 1 P total power dissipation T 25 C - 1150 mW tot amb T junction temperature - 150 C j T ambient temperature 65 +150 C amb T storage temperature 65 +150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 collector 1 cm . 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit 1 R thermal resistance from in free air -- 106 K/W th(j-a) junction to ambient R thermal resistance from -- 25 K/W th(j-sp) junction to solder point 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . PZT4403 3 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 2 March 2010 2 of 9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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