X-On Electronics has gained recognition as a prominent supplier of 2N3702 Unclassified across the USA, India, Europe, Australia, and various other global locations. 2N3702 Unclassified are a product manufactured by NTE. We provide cost-effective solutions for Unclassified, ensuring timely deliveries around the world.

2N3702 NTE

2N3702 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.2N3702
Manufacturer: NTE
Category: Unclassified
Description: TRANSISTOR, BIPOLAR, PNP, -80V, TO-92-3;; TRANSISTOR, BIPOLAR, PNP, -80V, TO-92-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:120MHz; Power Dissipation Pd:600mW; DC Collector Current:-500mA; DC Current Gain hFE:35hFE; MSL:-
Datasheet: 2N3702 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

170: USD 0.5095 ea
Line Total: USD 86.62

Availability - 0
MOQ: 170  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 170
Multiples : 1
170 : USD 0.5095
200 : USD 0.3253
500 : USD 0.2387

0
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 1
Multiples : 1
1 : USD 0.8311
10 : USD 0.6885
100 : USD 0.5146
500 : USD 0.4046
1000 : USD 0.3132
2500 : USD 0.296

   
Manufacturer
Product Category
Brand
Transistor Polarity
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N3702 from our Unclassified category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3702 and other electronic components in the Unclassified category and beyond.

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NTE289A (NPN) & NTE290A (PNP) Silicon Complementary Transistors Audio Power Amplifier Features: High Breakdown Voltage: V = 80V Min (BR)CEO High Current: I = 500mA C Low Saturation Voltage Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current , I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Collector Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherewise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 10 A, I = 0 100 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 1mA, R = Open 80 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 10 A, I = 0 5 V (BR)EBO E C Collector Cutoff Current I V = 40V, I = 0 1.0 A CBO CB E Emitter Cutoff Current I V = 4V, I = 0 1.0 A EBO EB C DC Current Gain h V = 5V, I = 50mA 100 200 FE (1) CE C h V = 5V, I = 400mA (Pulse) 35 FE (2) CE C CollectorEmitter Saturation Voltage V CE(sat) NTE289A I = 400mA, I = 40mA 0.2 0.6 V C B NTE290A 0.25 0.60 V CurrentGain Bandwidth Product f V = 10V, I = 10mA 120 MHz T CE C Output Capacitance C ob NTE289A V = 10V, f = 1MHz 5 pF CB NTE290A 9 pF Note 1. NTE289AMP is a matched pair of NTE289A with their DC Current Gain (h ) matched to FE within 10% of each other. Note 2. NTE290AMCP is a matched complementary pair containing 1 each of NTE289A (NPN) and NTE290A (PNP)..135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max

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