X-On Electronics has gained recognition as a prominent supplier of 2N3773 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3773 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N3773 NTE

2N3773 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.2N3773
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: BJT, NPN, 180V, TO-3; Transistor Polarit; BJT, NPN, 180V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:180V; Transition Frequency ft:6MHz; Power Dissipation Pd:150W; DC Collector Current:16A; DC Current Gain hFE:70hFE; No. of Pins:2Pins; Product Range:-
Datasheet: 2N3773 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 7.4287 ea
Line Total: USD 37.14

Availability - 189
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
189
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 5
Multiples : 1
5 : USD 7.4287
50 : USD 5.9062
100 : USD 5.8144
250 : USD 5.5518
500 : USD 5.2369
1000 : USD 5.1581
2500 : USD 5.0269
5000 : USD 4.8431

2
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 1
Multiples : 1
1 : USD 6.9478
3 : USD 6.2517
4 : USD 5.1324
10 : USD 4.8594

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
No. Of Pins
LoadingGif
 
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We are delighted to provide the 2N3773 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3773 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching NPN 2N3773*, PNP 2N6609 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (Note 3) CollectorEmitter Breakdown Voltage (Note 4) V 140 Vdc CEO(sus) (I = 0.2 Adc, I = 0) C B CollectorEmitter Sustaining Voltage (Note 4) V 160 Vdc CEX(sus) (I = 0.1 Adc, V = 1.5 Vdc, R = 100 Ohms) C BE(off) BE CollectorEmitter Sustaining Voltage V 150 Vdc CER(sus) (I = 0.2 Adc, R = 100 Ohms) C BE Collector Cutoff Current (Note 4) I 10 mAdc CEO (V = 120 Vdc, I = 0) CE B Collector Cutoff Current (Note 4) I mAdc CEX (V = 140 Vdc, V = 1.5 Vdc) CE BE(off) 2 (V = 140 Vdc, V = 1.5 Vdc, T = 150 C) CE BE(off) C 10 Collector Cutoff Current I 2 mAdc CBO (V = 140 Vdc, I = 0) CB E Emitter Cutoff Current (Note 4) I 5 mAdc EBO (V = 7 Vdc, I = 0) BE C ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 8 Adc, V = 4 Vdc) (Note 4) C CE 15 60 (I = 16 Adc, V = 4 Vdc) C CE 5 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 8 Adc, I = 800 mAdc) (Note 4) C B 1.4 (I = 16 Adc, I = 3.2 Adc) C B 4 BaseEmitter On Voltage (Note 4) V 2.2 Vdc BE(on) (I = 8 Adc, V = 4 Vdc) C CE DYNAMIC CHARACTERISTICS Magnitude of CommonEmitter h 4 fe SmallSignal, ShortCircuit, Forward Current Transfer Ratio (I = 1 A, f = 50 kHz) C SmallSignal Current Gain (Note 4) h 40 fe (I = 1 Adc, V = 4 Vdc, f = 1 kHz) C CE SECOND BREAKDOWN CHARACTERISTICS Second Breakdown Collector Current with Base Forward Biased I 1.5 Adc S/b t = 1 s (nonrepetitive), V = 100 V, See Figure 12 CE 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. 4. Indicates JEDEC Registered Data. ORDERING INFORMATION Device Package Shipping 2N3773 TO204 100 Unit / Tray 2N3773G TO204 100 Unit / Tray (PbFree) 2N6609 TO204 100 Unit / Tray For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi- cations Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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